Theoretical Discussion of Electron Transport Rate Constant at TCNQ/Ge and TiO₂ System

We have been studying and estimation the electronic transport constant at TCNQ / Ge and Tio2interface by means of tunneling potential (TP), transport energy reorientation (TER), driving transition energy DTE and coupling coefficient constant. A simple quantum model for the transition processes was adapted to estimation and analysis depending on the quantum state for donor state|alpha(D) > and acceptor state|alpha(A) > and assuming continuum levels of the system. Evaluation results were performed for the surfaces of Ge and Tio2as best as for multilayer TCNQ. The results show an electronic transfer feature for electronic TCNQ density of states and a semiconductor behavior. The electronic rate constant result for both systems shows a good tool to election system in applied devices. All these results indicate the