Fabrication and characterisation of high sensitivity copper-copper oxide-copper (Cu-CuO-Cu) metal-insulator-metal tunnel junctions

A report is presented on the realisation and characterisation of symmetrical metal-insulator-metal (MIM) diodes using the new material combination: copper-copper oxide-copper (Cu-CuO-Cu). The MIM diodes, having contact areas of 2 x 2 mu m(2), were fabricated using electron beam lithography and sputter deposition. The MIM diodes exhibited an absolute sensitivity as high as 4.497 V-1.